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IXTC250N075T
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
ISOPLUS220 (IXTC) Outline
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
75
120
9900
1100
230
29
65
S
pF
pF
pF
ns
ns
t d(off)
t f
Q g(on)
Q gs
Q gd
R G = 3.3 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
55
47
200
40
50
ns
ns
nC
nC
nC
1.Gate 2. Drain
3.Sourc e
Note: Bottom heatsink (Pin 4) is
electrically isolated from Pins 1,2, and 3.
R thJC
0.96 ° C/W
R thCS
0.5
° C/W
Source-Drain Diode
Characteristic Values
T J = 25 ° C unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
90
220
600
1.0
A
A
V
ns
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test: t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
7,005,734 B2 7,157,338B2
7,063,975 B2
7,071,537
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